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New DL10 25W LED Down Light from GlacialLight |
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July 24, 2012...Cree Inc, of Durham, North Carolina has introduced a new four-inch CR4(TM) LED downlight and a higher lumen output six-inch downlight. The company claims that the new six-inch CR6(TM) downlight uses 87 percent less energy than comparable incandescent lighting. Cree says that the CR6, with typical commercial usage of 12 hours per day and the national average $0.11 per kWh electric costs, lighting-related HVAC impact and relamp maintenance reductions, can pay for itself in less than one year in many commercial installations.
Both downlights come with an Edison or GU24 base. They have integrated power supplies and driver electronics as well as flip chips installed. The luminaires have an advanced optical diffusing lens, and an integrated trim and heat sink.
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Both new products are powered by Cree TrueWhite(R) Technology to deliver 90+ CRI. Cree asserts that its TrueWhite Technology maintains color consistency over the rated lifetime of the product while maintaining high luminous efficacy. The company says that new CR Series LED downlights can be easily installed into most standard four-inch and six-inch recessed housings, making them ideal for use in both residential and light commercial, new construction or upgrade applications.
July 24, 2012...Delta Electronics Inc., a Taiwan-based power-management-system supplier, reports that it is launching a co-branded LED light bulb with President Chain Store Corp., a company that operates 7-11 convenience stores throughout Taiwan, according to an article in Focus Taiwan.
Roland Chiang, director of Delta Electronics' solid-state lighting division noted that the first batch of 300,000 co-branded LED light bulbs had been shipped to the warehouse of the convenience stores, and is expected to enter the local market in two days. He added that the second batch of 300,000 of the energy-saving light bulbs was also ready for shipments. Chiang said he was confident the company would be able to sell 700,000 to 800,000 of the co-branded light bulbs in Taiwan this year.
The company hopes that through cooperation with the convenience-store giant, it will become Taiwan's top selling brand of LED light bulbs, according to Chiang . Also, he estimated that the company will increase its global shipment of LED light bulbs manufactured for international brands to 2 million units this year.
July 24, 2012...WAC Lighting of Port Washington, New York has come out with an LED light based on a timeless classic featuring clean lines and authentic period perfection. The Milford Pendant was introduced in the new Early Electric Collection. It has a milk white glass shade that creates a warm glow, radiating charm and nostalgia for discriminating designers and homeowners.
Milford was designed with an energy efficient LED (light emitting diode) light source. The low voltage pendant operates on 12-volt low voltage systems and uses just 5.6 watts while delivering 370 lumens. It has a CRI (color rendering index) of 85 and a color temperature of 3000K.
Using the company's Quick Connect(TM) adapters, the Milford Pendant operates with WAC's line of low and line voltage track and rail systems and includes the shade, socket set and lamp. Milford can also be used as a canopy mount using the Quick Adjust Canopy that allows suspension cable to accommodate a variety of ceiling heights and applications.
The luminaire with a classic design comes with a choice of finishes including: brushed nickel, chrome, and dark bronze. The height of the pendant is 7 11/16 inches tall and 7 5/8 inches wide and is backed by WAC's five year warranty.
July 19, 2012...Sunovia Energy Technologies Inc. of Sarasota, Florida USA, announced that Leader Electronics will immediately begin global production of Sunovia's proprietary line of EvoLucia Aimed Optics™ LED lighting products as a result of a finalized agreement. In addition, Sunovia granted Leader the exclusive license to manufacture and distribute the Aimed Optics™ product lines into China, Taiwan and other strategic markets within Asia. Leader Electronics primarily produces and distributes transformers, power converters and power supplies.
The agreement is comprised of more than $20 million in investments and incentives for Sunovia. This includes a direct $1 million capital investment by Leader into Sunovia at $.08 per share. Further details may be found in the company's filings with the United States Securities Exchange Commission.
The Agreement positions Leader Electronics as Sunovia's primary fixture manufacturer for large LED lighting projects that will commence during the second half of 2012. Sunovia also agreed to include certain Leader electronics components (presumably power supplies and/or power converters) in the EvoLucia Aimed Optics™ fixtures that Leader will manufacture.
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Commentary & Perspectives...
July 26, 2012...Never ones to knock a new technology approach, we've been dutifully covering the GaN on Silicon progress for a decade or so at this point. I can't remember if it was at one of our 2000 or 2001 conferences (CS Outlook) that we listened enthusiastically to the "near production availability" of GaN-on-Si substrates from Motorola (before they had Freescaled). Cheaper, easier to handle, processes move to standard silicon-type platforms, and since the wafers were smaller than state-of-the-art, those production platforms were likely older and already amortized making the cheaper even cheaper. Cool. Followed by, pretty much, nothing...
As time passed, it seemed we'd hear about more amazing progress in GaN-on-silicon about every two years, with a blip from a university or other research house. But each time it appeared to be a little over-hyped, as a decent lab result failed to translate into a production-ready solution. However, that's how technical innovation (as well as fame and fortune) often progresses. The "overnight" successes are often decades in the making, as hard workers take two steps forward, and somewhere between 1 and 3 steps back, but as long as that average is less then two back, it creates progress. And progress builds on progress.
What it means for lighting... Before we dive down into some LED material/technology kind of detail, it should be noted that GaN-on-silicon LEDs won't be likely to supersede existing technologies. As far as the luminaire and lamp designers would be concerned, what they will be looking at is a richer variety of price-performance choices that could be enabled by lowered manufacturing costs for the GaN-on-Si based solutions. That will first hinge on actual high volume production, which may still be a while away. Toshiba, for example, announced this week that they were going into mass production on GaN-on-Si for white LEDs, but somewhat confusingly noted their progress in "milliwatts of output power" which is not the typical way of quoting white LED performance (that's the single-color metric), and that it would start in October on a new production line they are building for it. While only a few months away, that's still a lot time for things to happen, so wait and see is still the order of the day. When we do get GaN-on-silicon LEDs in mass production, they also likely won't be running at the same peak efficiencies as we see from the existing technologies, and efficiency is still a big part of the game here, since more lumens per watt generally lets you pack more lumens into a given amount of space. While we have plenty of space to produce a streetlight that is plenty bright enough at 100 lumens per watt, things get a bit more squeezy when we look at an A-lamp or worse, an MR. Lots of lumens per square millimeter are required, and more lumens per watt usually correlates. GaN-on-Si will be good for some things, but not likely for everything. "Traditional" LED costs also continue to fall, and manufacturing efficiencies are increasing, so I don't believe that one "winner" can be forecast, except for the designers and buyers who will have more types of technology competing for their business, and more competition is better when it comes to driving down costs.
The tech part... In the most basic sense, the problem everyone was trying to solve is pretty simple. Gallium nitride, with its combinations and derivatives, which support the LEDs in the bluish end of the spectrum, as well as high-frequency, high power transmission types of technology as well as blue laser, is not "lattice compatible" with silicon. The whole game of building a wafer that becomes the foundation of a semiconductor device is that you want to blend the right materials as evenly and defect-free as possible. Pure GaN would be a great starting point for all of these devices, but "growing" a pure GaN substrate is not easy and is devilishly expensive. Sometimes it's worth it, if you're just trying to get a few thousand dollar transistors off of it, but in most cases, you want more devices, and you want them cheaper, so GaN needs to be "deposited" on top of something else. That something else (sapphire most commonly, along with silicon carbide (SiC) and now silicon, has a different crystal structure than the GaN, so if you just squirted some GaN layers onto it, the GaN part would end up with a bunch of cracks or other features that would lead to dead or prematurely dying devices. The solution is to add a "buffer-layer" between the starting substrate and the GaN layers. Buffers can be either a mix of materials or a series of layer steps that can act as a transition between the substrate's crystal structure and the GaN's structure. A typical buffer description could be something like is found in Taiwan National Cheng-Kung University's 2006 patent 7,014,710 that reads "...characterized in that a buffer layer of SiCN [silicon carbon nitride] is grown to avoid lattice mismatch which appears when Gallium Nitride is grown directly on silicon substrate". Note that the buffer blends things that appear above and below it, silicon at one end and a nitride at the other. While the buffer thing is "simple" as a problem, it's not "easy" to solve, since you don't have the dynamics of the crystal structure, but the fact that the melting point that allows you to "spray" a composition onto one material may be a thermal stress point for the other material, and once they are layered, they may heat or cool at different rates, like that bi-metal strip that makes incandescent Christmas lights blink... bending not good in this case.
So folks are figuring it out... Bridgelux was the first to set off the latest round of "we're gonna make it work and change the face of the LED industry" and went with a chips-all-in attitude when describing the future of their LED technology. In a March 2011 story (scroll down a bit when you get there), they announced 135 lm/W result for a 4700K GaN-on-silicon LED that was a result of "quietly dedicated GaN-on-silicon team" that had been operating for the previous 5 years. As we've seen, we never know til we see chips on the market, but "all of sudden", we're hearing a lot more about GaN on silicon than ever before. In a January 2012 news release, Osram Opto Semiconductors, a company not known for brash "lab results" claims, announced that their own GaN-on-Si program had chips in the pilot stage. With similar timing, Cree, who bases their LEDs on silicon carbide rather than sapphire, began a concerted effort to message on what they see as inherent advantages to that approach, essentially, "GaN-on-SiC produces more efficient, more reliable LEDs, and always will". It begs the question of "why now?" when they've been in the sapphire vs. SiC trenches for a decade, and have simply messaged on their results, which are consistently good. But if someone if they were trying to counter an up and coming approach that is going to be making a lot of noise in the near future, their "re-emphasized" message is exactly the one I'd recommend. Validation that GaN-on-SiC might finally be a commercial threat?
In this week's news, GaN-on-Si was riding a wave as: A) Toshiba announced they where kicking into full volume production as a result of "collaboration" first announced in May with Bridgelux for GaN-on-Si LED technology; B) Aixtron announced the launch of their AIX G5+ 5x200 mm GaN-on-Si technology package for its AIX G5 Planetary Reactor® platform; C) Azzuro Semiconductors announced it had received 2.6 million Euro grant from the government of Saxony (Germany) for a 200 mm LED and Power Semiconductor GaN-on-Si-wafer development program which; D) which was followed by a mildly head-scratching Veeco announcement the next day that it had sold them a TurboDisc® K465i™ MOCVD system to do 150mm GaN on Si work (so is that the precursor to their 200mm work, or will we see Azzuro "spreading the love" with an upcoming AIX G5+ 200mm purchase?). Sounds like we're getting close...
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